Semiconductor device with improved dielectric breakdown strength

Details Semiconductor device with improved dielectric breakdown strength Semiconductor device with improved dielectric breakdown strength

1996-05-16

1998-12-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257488, 257494, 257994, H01L 2358, H01L 2900

Patent

active

058442936

ABSTRACT:
A semiconductor device is provided with improved resistance to dielectric breakdown due to high voltage resulting from static electricity applied to a dielectric film thereof, where a conductive film such as a resistance film or a electrode film is provided on a semiconductor substrate through the dielectric film in a manner electrically out of direct connection to the substrate. Embodiments include a conductor film pattern in electrical connection with the substrate, and at least one of the conductive film or the conductor film pattern is provided with a projecting portion to provide a narrow gap therebetween, thereby serving as a bypass to discharge static electricity.

REFERENCES:
patent: 3852801 (1974-12-01), Itoh et al.
patent: 4430663 (1984-02-01), D'Altroy et al.
patent: 4713681 (1987-12-01), Beasom

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