Semiconductor device with improved contact fuse

Details Semiconductor device with improved contact fuse Semiconductor device with improved contact fuse

2006-04-25

2008-08-19

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07413980

ABSTRACT:
One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.

REFERENCES:
patent: 6791135 (2004-09-01), Takenaka
patent: 7064369 (2006-06-01), Koh
patent: 7118958 (2006-10-01), Phan et al.
patent: 7205168 (2007-04-01), Oohata et al.
patent: 2006/0049511 (2006-03-01), Schaefer
patent: 2006/0279975 (2006-12-01), Choi

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