Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-12-02
1993-07-13
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, H01L 2972
Patent
active
052276546
ABSTRACT:
At least part of a low impurity concentration collector region which lies between the emitter and collector regions of a bipolar transistor in a Bi-CMOS device is formed to have a low impurity concentration. Therefore, a high emitter-collector withstanding voltage can be obtained. Further, at least part of the low impurity concentration collector region which lies between the base region and an opposite conductivity type region is formed to have a high impurity concentration. Therefore, the punch-through withstanding voltage of a parasitic transistor formed of the base, collector and, opposite conductivity type region can be enhanced, and, at the same time, the collector resistance can be reduced.
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patent: 3920493 (1975-11-01), Kravitz
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patent: 4267557 (1981-02-01), Muramoto et al.
patent: 4388634 (1983-06-01), Amantea et al.
patent: 4523003 (1985-07-01), Beasom
Muller et al., Device Elec. for IC's, 1986, pp. 193-202.
Patent Abstracts of Japan, vol. 13, No. 46 (E-711)[3394] Feb. 2, 1989; Japanese Patent Document No. 63-240058, dated Oct. 5, 1988, NEC Corp.
IBM Technical Disclosure Bulletin, vol. 13, No. 7, Dec. 1970, p. 1981; "Symmetrical Transistor Structure", Davidson et al.
Momose Hiroshi
Unno Yukari
James Andrew J.
Kabushiki Kaisha Toshiba
Meier Stephen D.
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