Semiconductor device with improved breakdown voltage characteris

Details Semiconductor device with improved breakdown voltage characteris Semiconductor device with improved breakdown voltage characteris

1995-01-13

1996-03-05

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257493, 257494, 257495, 257544, 257786, H01L 2358, H01L 2348

Patent

active

054970261

ABSTRACT:
A semiconductor device includes a semiconductor body (1, 2) with an island-shaped region (3) adjoining the surface, in which a contact pad (6) is provided above the island-shaped region (3) and separated therefrom by an insulating layer (5). The island-shaped region (3) forms a pn-junction (34) with an adjoining isolating region (4). According to the invention, the device is provided with regions (40, 41) for increasing the breakdown voltage of the pn-junction (34).

REFERENCES:
patent: 3812521 (1974-08-01), Davis et al.
patent: 4750028 (1988-12-01), Ludikhuize

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