Semiconductor device with improved adhesion between titanium-bas

Details Semiconductor device with improved adhesion between titanium-bas Semiconductor device with improved adhesion between titanium-bas

1997-11-13

1999-12-21

Booth, Richard

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438622, 438787, H01L 2131, H01L 21469

Patent

active

060048875

ABSTRACT:
A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1.times.10.sup.20 atoms/cm.sup.3.

REFERENCES:
International Conference on Solid State Devices and Materials, Aug. 21, 1996, pp. 608-610.
Electrochemical Society, Inc., Journal of the Electrochemical Society, vol. 140, No. 3, Mar. 1993, pp. 687-692.
Institute of Electrical and Electronics Engineers Electron Devices Society, 1994 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, Jun. 7-9, 1994, pp. 59-60.
EPO Search Report for European Appln. No. 99114107.8-2203, Dated Aug. 23,1999.
International Conference on Solid State Devices & Materials, Aug. 21-24, 1995, Yokohama, JP (1995) Aug. 21, Tokyo,JP, "Elimination of A1 Line and Via Resistence Degradation Under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics," B. K. Hwang, et al.
Journal of the Electrochemical Society 140 (1993)March, No. 3, Manchester, NH, US, "A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnections," T. Homma, et al.
1994 Symposium of VLSI Technology Digest of Technical Papers (Jul. 6, 1994), "Reduction of Wiring Capacitance with New Low Dielectric SiOF Interlayer Film for High Speed/Low Power Sub-half Micron CMOS," J. Ida, et al.

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