Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1991-01-24
1993-02-02
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257494, 257341, H01L 2906, H01L 2934
Patent
active
051842041
ABSTRACT:
A semiconductor device in which the breakdown voltages of the cell unit and the guard ring can easily be matched, and the surge endurance of the device can be improved. This semiconductor device includes a guard ring region surrounding the cell diffusion layers which is formed from an array of a plurality of guard ring cells, where each of the guard ring cells is identical to each of the cell diffusion layers and the guard ring cells are electrically connected mutually, so that the diffusion depths of each of the cells of the guard ring region and the cell diffusion layers are identical, and consequently the breakdown voltages for the guard ring region and the cell diffusion layers can be made equal to each other.
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Cohen et al., "A High-Performance Planar Power MOSFET", IEEE Trans. on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 340-343.
Enokido Yutaka
Hirota Yukitsugu
Hoshi Masakatsu
Matsushita Tsutomu
Mihara Teruyoshi
Carroll J.
Nissan Motor Co,. Ltd.
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