Semiconductor device with high surge endurance

Details Semiconductor device with high surge endurance Semiconductor device with high surge endurance

1991-01-24

1993-02-02

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With large area flexible electrodes in press contact with...

257494, 257341, H01L 2906, H01L 2934

Patent

active

051842041

ABSTRACT:
A semiconductor device in which the breakdown voltages of the cell unit and the guard ring can easily be matched, and the surge endurance of the device can be improved. This semiconductor device includes a guard ring region surrounding the cell diffusion layers which is formed from an array of a plurality of guard ring cells, where each of the guard ring cells is identical to each of the cell diffusion layers and the guard ring cells are electrically connected mutually, so that the diffusion depths of each of the cells of the guard ring region and the cell diffusion layers are identical, and consequently the breakdown voltages for the guard ring region and the cell diffusion layers can be made equal to each other.

REFERENCES:
patent: 3538398 (1970-11-01), Whiting
patent: 4012762 (1977-03-01), Abe et al.
patent: 4774560 (1988-09-01), Coe
patent: 4801995 (1989-01-01), Iwanishi
patent: 4803532 (1989-02-01), Mihara
patent: 5032878 (1991-07-01), Davies et al.
Cohen et al., "A High-Performance Planar Power MOSFET", IEEE Trans. on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 340-343.

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