Semiconductor device with high on current and low leakage

Details Semiconductor device with high on current and low leakage Semiconductor device with high on current and low leakage

2007-06-12

2010-06-01

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S217000, C257S260000, C257S271000, C257SE21632

Reexamination Certificate

active

07728387

ABSTRACT:
Various semiconductor devices and methods of manufacture are employed. According to an example embodiment of the present invention, a MOS-compatible semiconductor device exhibits high channel mobility and low leakage. The device includes a channel region having a high-mobility strained material layer and a tunneling mitigation layer on the strained material layer to mitigate tunnel leakage. The strained material has a lattice structure that is strained to match the lattice structure of the tunneling mitigation layer. An insulator layer is on the tunneling mitigation layer, and an electrode is over the insulator and adapted to apply a voltage bias to the channel region to switch the device between conductive and nonconductive states. Current is transported in the conductive state as predominantly facilitated via the mobility of the strained material layer, and wherein tunneling current in the nonconductive state is mitigated by the tunneling mitigation layer.

REFERENCES:
patent: 2005/0287759 (2005-12-01), Wang et al.
patent: 2007/0138565 (2007-06-01), Datta et al.

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