Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-06
1994-03-08
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257342, 257409, 257401, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
052930564
ABSTRACT:
A semiconductor device includes an N.sup.- type semiconductor layer (2). The N.sup.- type semiconductor layer (2) includes a triangular pole trench (10), an apex portion thereof contains a gate electrode (5). The trench (10) penetrates the semiconductor layer (2) and a P type well region (3) and projects into an N.sup.+ type source region (4). A source electrode (7) is disposed so as to be insulated from the semiconductor layer (2) by an oxide film (9) and in contact with the well region (3) and the source region (4). A drain electrode (8) is connected to the semiconductor layer (2) through an N.sup.+ type semiconductor substrate (1). With a higher potential at the gate electrode (5) than at the source electrode (7), the well region (3) is partially inverted into N type near the trench (10). Thus, the semiconductor device is turned on due to a channel created associated to the conductivity type inversion. Most of current flow allowed in the semiconductor layer (2) by the channel flows near the trench (10). Hence, even when process patterns are refined, electrode-to-electrode insulation remains undegraded in the semiconductor device, attaining low on-resistance and high off-breakdown voltage.
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Hille Rolf
Loke Steven
Mitsubishi Denki & Kabushiki Kaisha
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