Semiconductor device with high-k dielectric layer

Details Semiconductor device with high-k dielectric layer Semiconductor device with high-k dielectric layer

2007-10-16

2007-10-16

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257S412000

Reexamination Certificate

active

10940055

ABSTRACT:
A semiconductor device comprises a substrate including isolation regions and active regions, and a high-k dielectric layer proximate the substrate. The high-k dielectric layer comprises a mixture formed by annealing at least one high-k material and at least one metal to oxidize the metal. The semiconductor device comprises a gate electrode proximate the high-k dielectric layer.

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