Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-22
1999-10-26
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, 257301, H01L 2992, H01L 27108
Patent
active
059733519
ABSTRACT:
A semiconductor device having a capacitor containing an insulator material having a high dielectric constant and high charge storing capability of the following formula: (A.sup.1).sub.x (A.sup.2).sub.2-x (D).sub.d (B.sup.1).sub.y (B.sup.2).sub.1-y O.sub.4 where A.sup.1 and A.sup.2 are cations, B.sup.1 and B.sup.2 are anions, 0.ltoreq.x.ltoreq.2 with the proviso that A.sup.1 and A.sup.2 are different types of atoms when 0<x<2, and 0.ltoreq.y.ltoreq.1 with the proviso that B.sup.1 and B.sup.2 are different types of atoms when 0<y<1, and D is an optional dopant in a total amount of 0.ltoreq.d.ltoreq.0.1.
REFERENCES:
patent: 4490737 (1984-12-01), Pierce et al.
patent: 4830981 (1989-05-01), Baglee et al.
patent: 5326721 (1994-07-01), Summerfelt
patent: 5418389 (1995-05-01), Watanabe
patent: 5423285 (1995-06-01), Paz de Araujo et al.
patent: 5438037 (1995-08-01), Tanaka
patent: 5468679 (1995-11-01), Paz de Araujo et al.
patent: 5473171 (1995-12-01), Summerfelt
patent: 5514904 (1996-05-01), Onga et al.
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 5753945 (1998-05-01), Chivukula et al.
J. Choisnet, et al; Structural relationships in close-packed AB204 Oxides Involving Spinel, Olivine, and Hexagonal LiFeSn04 Structures; Jrnl of Solid State Chem. 45, (1982) pp. 280-289.
Charles Kittel; Classification of Ferroelectric Crystals; Introduction to Solid State Physics, 5.sup.th Ed.; pp. 414-416. (1976).
Son V. Nguyen; Thesis: Preparation and Photoelectronic Properties of the System Cd2Gel-xSix)4 and The Crystallographic and Magnetic Properties of Dispersed Nickel Particles on Spherocarb Supports;, (Jun. 1981).
Kotecki David E.
Nguyen Son V.
Brown Peter Toby
Guerrero Maria
International Business Machines - Corporation
Neff Daryl
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