Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2006-12-07
2009-02-24
Smith, Zandra (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S185000, C257S191000, C257S285000, C257S325000, C257S463000, C257S548000, C257S558000, C257S591000, C257S592000, C257S655000, C438S037000, C438S081000, C438S350000, C438S376000, C438S547000
Reexamination Certificate
active
07495264
ABSTRACT:
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.
REFERENCES:
patent: 3945031 (1976-03-01), Kahng et al.
patent: 5608250 (1997-03-01), Kalnitsky
patent: 6190779 (2001-02-01), Heimann et al.
patent: 6291867 (2001-09-01), Wallace et al.
patent: 6328816 (2001-12-01), Carlson et al.
patent: 6350684 (2002-02-01), Wang et al.
patent: 6642131 (2003-11-01), Harada
patent: 6809371 (2004-10-01), Sugiyama
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 6841439 (2005-01-01), Anthony et al.
patent: 6849908 (2005-02-01), Hirano et al.
patent: 2001/0023120 (2001-09-01), Tsunashima et al.
patent: 2002/0175393 (2002-11-01), Baum et al.
patent: 2003/0218223 (2003-11-01), Nishiyama et al.
patent: 2004/0070037 (2004-04-01), Takayanagi
patent: 2005/0233156 (2005-10-01), Senzaki et al.
patent: 2007/0166923 (2007-07-01), Shih et al.
patent: 10-294432 (1998-11-01), None
patent: 11-135774 (1999-05-01), None
patent: 11-186523 (1999-07-01), None
patent: 2000-323591 (2000-11-01), None
patent: 2001-217238 (2001-08-01), None
patent: 5-275646 (2006-10-01), None
Ikarashi Nobuyuki
Ono Haruhiko
Watanabe Heiji
Mitchell James M
NEC Corporation
Smith Zandra
Sughrue & Mion, PLLC
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