Semiconductor device with high and low breakdown voltage and...

Details Semiconductor device with high and low breakdown voltage and... Semiconductor device with high and low breakdown voltage and...

2005-01-25

2005-01-25

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S346000, C257S408000, C257S339000, C257S487000, C257S371000, C257S391000, C257S392000

Reexamination Certificate

active

06847080

ABSTRACT:
The objective of this invention is to provide a semiconductor device and its manufacturing method with which the offset can be kept fixed even in high breakdown voltage MOS transistors, and that can accommodate high voltages for high breakdown voltage MOS transistors and miniaturization of MOS transistors for low voltage drive. Its constitution provides for inner side wall insulating films14and24and outer side wall insulating films16and26formed at both sides of the gate electrodes12and22in both high breakdown voltage transistor TR2and transistor TR1for low voltage drive, and heavily doped region27is formed in breakdown voltage transistor TR2using both inner side wall insulating film24and outer side wall insulating film26as masks so that offset d2is controlled by the combined widths of the two side wall insulating films. In transistor TR1for low voltage drive, heavily doped region15is formed using only inner side wall insulating film14as the mask, and offset d1is controlled.

REFERENCES:
patent: 6157064 (2000-12-01), Huang
patent: 6316302 (2001-11-01), Cheek et al.

Affiliated with

Also associated with

Rating

Semiconductor device with high and low breakdown voltage and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with high and low breakdown voltage and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with high and low breakdown voltage and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3384693