Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-11-21
2006-11-21
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S758000
Reexamination Certificate
active
07138700
ABSTRACT:
A semiconductor device has a first guard ring surrounding a circuit region, a second ring disposed between the circuit region and the first guard ring, and first connections connecting the first guard ring and the second guard ring to each other. An area sandwiched between the first guard ring and the second guard ring is divided by the first connections into a plurality of subareas. Even if the first guard ring is partly defective, water enters from outside into only the subarea which is contiguous to the defective part of the first guard ring.
REFERENCES:
patent: 2001/0038138 (2001-11-01), Mites et al.
patent: 2003/0160262 (2003-08-01), Kitada et al.
patent: 9-45766 (1997-02-01), None
Iguchi Manabu
Ishigami Takashi
Kurokawa Tetsuya
Sekine Makoto
Tomita Ryuji
NEC Electronics Corporation
Pham Long
Young & Thompson
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