Semiconductor device with grounding structure

Details Semiconductor device with grounding structure Semiconductor device with grounding structure

2006-07-31

2011-11-22

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C257S750000, C257S758000, C257S760000, C257SE23153, C257SE21575, C257S773000

Reexamination Certificate

active

08062974

ABSTRACT:
Conductions and vias between different, stacked metallic layers of a semiconductor device may be mechanically damaged by mechanical strain. According to an exemplary embodiment of the present invention, this mechanical strain may be transferred through the layer structure to the substrate by a grid of grounding structures and isolation and passivation layers which are connected by the grounding structures. This may provide for an enhancement of the lifetime of the semiconductor devices.

REFERENCES:
patent: 5763936 (1998-06-01), Yamaha et al.
patent: 5880529 (1999-03-01), Barrow
patent: 7067902 (2006-06-01), Hichri et al.
patent: 2005/0118803 (2005-06-01), Hichri et al.
patent: 0924762 (1999-06-01), None
patent: 2001053148 (2001-02-01), None

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