Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-23
2011-11-01
Sarkar, Asok (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S204000, C257S346000, C257S387000, C257SE29039
Reexamination Certificate
active
08049254
ABSTRACT:
A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
REFERENCES:
patent: 6946350 (2005-09-01), Lindert et al.
patent: 7153753 (2006-12-01), Forbes
patent: 2005/0045969 (2005-03-01), Lee et al.
patent: 2005/0148147 (2005-07-01), Keating et al.
patent: 2007/0004123 (2007-01-01), Bohr et al.
patent: 2007/0111417 (2007-05-01), Bryant et al.
Hurd Trace Q.
Koontz Elisabeth Marley
Pacheco Rotondaro Antonio Luis
Brady III Wade J.
Garner Jacqueline J.
Sarkar Asok
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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