Semiconductor device with gate electrodes having conductive film

Details Semiconductor device with gate electrodes having conductive film Semiconductor device with gate electrodes having conductive film

1997-05-23

1999-08-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257383, 257384, 257396, 257412, 257413, H01L 2976, H01L 2994, H01L 31113, H01L 31119

Patent

active

059397586

ABSTRACT:
First and second gate electrodes are formed spaced from each other on a semiconductor substrate. A pair of impurity diffusion layers are provided on both sides of the first gate electrode at the surface of the semiconductor substrate. The first gate electrode includes a first lower conductive film, a first protective conductive film provided on the first lower conductive film, and a first upper conductive film provided on the first protective conductive film. The second gate electrode includes a second lower conductive film, a second protective conductive film provided on the second lower conductive film, and a second upper conductive film provided on the second protective conductive film. The second upper conductive film extends to be in contact with one of the pair of impurity diffusion layers.

REFERENCES:
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patent: 5059554 (1991-10-01), Spinner et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5241207 (1993-08-01), Toyoshima et al.
patent: 5483104 (1996-01-01), Godinho
patent: 5654575 (1997-08-01), Jeng
patent: 5656861 (1997-08-01), Godinho et al.
patent: 5703391 (1997-12-01), Arima
patent: 5723893 (1998-03-01), Yu et al.
patent: 5801427 (1998-09-01), Shiratake et al.

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