Semiconductor device with gate electrode portion and method of m

Details Semiconductor device with gate electrode portion and method of m Semiconductor device with gate electrode portion and method of m

1997-11-21

2000-03-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257411, 257413, 257900, 257412, 438184, 438204, 438216, 438231, H01L 27088

Patent

active

060376309

ABSTRACT:
A first polysilicon film which contains phosphorus as an impurity is formed on a semiconductor substrate. A second polysilicon film which is higher in phosphorus concentration than the first polysilicon film is formed on the first polysilicon film. The second polysilicon film is anisotropically etched to expose a surface of the first polysilicon film. Thermal oxidation is then performed. A surface of the first polysilicon film and a surface of the second polysilicon film are oxidized according to their respective oxidization rates depending on their respective phosphorus concentrations. Thus, a semiconductor device in which the size of the gate electrode can be readily controlled and damage to the semiconductor substrate or the like can be suppressed, is obtained.

REFERENCES:
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patent: 4907048 (1990-03-01), Huang
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patent: 5256894 (1993-10-01), Shino
patent: 5424570 (1995-06-01), Sardella et al.
patent: 5818092 (1998-10-01), Bai et al.
patent: 5834817 (1998-11-01), Satoh et al.
patent: 5841173 (1998-11-01), Yamashita

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