Semiconductor device with gate electrode having end portions to

Details Semiconductor device with gate electrode having end portions to Semiconductor device with gate electrode having end portions to

1998-10-01

2000-05-02

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257412, 257325, 257333, 257395, 257388, H01L 2976, H01L 2994, H01L 3162

Patent

active

060575824

ABSTRACT:
Semiconductor device and method for fabricating the same, is disclosed, in which a gate insulating film is formed thicker at portions opposite to edge portions of a gate electrode for preventing the hot carrier possible to occur due to a strong electric field of the gate electrode, that can improve a device reliability, the device including a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, the gate insulating film having both end portions formed thicker than a center portion, a gate electrode formed on the gate insulating film, the gate electrode having a center portion formed thicker than portions thereof on both sides of the gate insulating film, and impurity regions formed in surfaces of the semiconductor substrate on both sides of the gate electrode, and the method including the steps of (1) forming a gate insulating film on a semiconductor substrate, and forming a gate electrode having a thicker center portion on the gate insulating film, (2) expanding thicknesses of the gate insulating film at both ends thereof, and (3) forming impurity regions in surfaces of the semiconductor substrate on both sides of the gate electrode.

REFERENCES:
patent: 5144393 (1992-09-01), Yamaguchi et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5422505 (1995-06-01), Shirai
patent: 5512771 (1996-04-01), Hiroki et al.
patent: 5610430 (1997-03-01), Yamashita et al.

Affiliated with

Also associated with

Rating

Semiconductor device with gate electrode having end portions to does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with gate electrode having end portions to , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with gate electrode having end portions to will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1595859