Semiconductor device with fin and silicide structure

Details Semiconductor device with fin and silicide structure Semiconductor device with fin and silicide structure

2011-03-29

2011-03-29

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S413000, C257S329000, C257SE29274

Reexamination Certificate

active

07915693

ABSTRACT:
A semiconductor device according to an embodiment includes: a semiconductor substrate; a fin formed on the semiconductor substrate; a gate electrode formed so as to sandwich both side faces of the fin between its opposite portions via a gate insulating film; an extension layer formed on a region of a side face of the fin, the region being on the both sides of the gate electrode, the extension layer having a plane faced to a surface of the semiconductor substrate at an acute angle; and a silicide layer formed on a surface of the plane faced to the surface of the semiconductor substrate at an acute angle.

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