Semiconductor device with filed-effect transistors of a compleme

Details Semiconductor device with filed-effect transistors of a compleme Semiconductor device with filed-effect transistors of a compleme

1998-05-06

2000-11-21

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 2978, H01L 3300

Patent

active

061506850

ABSTRACT:
A semiconductor device prevents latch up and enables subminiaturization of its structure, and a method can manufacture the semiconductor device. In the semiconductor device containing field-effect transistors of a complementary type, an interconnection containing semiconductor having n-type impurity connects a p-type impurity diffusion region forming an emitter electrode of a parasitically formed bipolar transistor to an n-type impurity diffusion region electrically connected to a power supply line. Thereby, a pn junction operating as a rectifier element is formed at a contact region between a connection portion and the p-type impurity diffusion region.

REFERENCES:
patent: 5686736 (1997-11-01), Natsume
patent: 5686752 (1997-11-01), Ishimura et al.
patent: 5798551 (1998-08-01), Kikushima et al.
patent: 5830788 (1998-11-01), Hiroki et al.
patent: 5841153 (1998-11-01), Kariyama et al.

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