Semiconductor device with ESD protection

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257355, 257356, 438200, 438202, H01L 2362

Patent

active

057448418

ABSTRACT:
A semiconductor device with an electrostatic discharge (ESD) protection transistor is devised, wherein the ESD protection transistor has halo regions of an opposite conductivity type from the source and drain regions adjacent thereto. In one embodiment, the ESD protection transistor is a thick field oxide (TFO) transistor. In some cases, the halo regions may be provided with an ion implant step without the use of an extra mask. The halo regions permit the ESD protection transistor to have its breakdown voltage adjusted so that it turns on before the device it is protecting is affected by an ESD event. The use of halo regions avoids the increase in device area and adverse effects to the AC performance of the circuit being protected that are disadvantages of prior approaches.

REFERENCES:
patent: 4142926 (1979-03-01), Morgan
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4402761 (1983-09-01), Feist
patent: 4509067 (1985-04-01), Minami et al.
patent: 4602267 (1986-07-01), Shirato
patent: 4697199 (1987-09-01), De Graaff et al.
patent: 4987465 (1991-01-01), Longcor et al.
patent: 5183773 (1993-02-01), Miyata
patent: 5290724 (1994-03-01), Leach
patent: 5371395 (1994-12-01), Hawkins
patent: 5395773 (1995-03-01), Ravindhran et al.
patent: 5486716 (1996-01-01), Saito et al.
patent: 5545575 (1996-08-01), Cheng et al.
Krakauer, et al.; "ESD Protection in a 3.3V Sub-Micron Silicided CMOS Technology;" EOS/ESD Symposium 92; pp. 250-257 (1992).
Kodama, et al.; "A Symmetrical Side Wall (SSW)-DSA Cell for a 64Mbit Flash Memory;" IEDM 91; pp. 303-306.
Duvvury, et al.; "Reliability Design of p+-Pocket Implant LDD Transistors"; IEDM 90; pp. 215-218.
Charvaka Duvvury; "ESD Reliability for Advanced CMOS Technologies;" International Electron Devices and Materials Symposium (1990); pp. 265-272.
Stanley Wolf, Ph.D.; "Silison Processing for the VLSI Era vol. 2: Process Integration"; pp. 356-359; (1990).
Kume, et al.; "A Flash-Erase EEPROM Cell with an Asymmetric Source and Drain Structure;" IEDM 87; pp. 560-563.

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