Semiconductor device with electrode formed of conductive layer c

Details Semiconductor device with electrode formed of conductive layer c Semiconductor device with electrode formed of conductive layer c

1998-03-31

2000-04-11

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438648, 438649, 438664, 438682, 438683, 438660, H01L 2144, H01L 214763

Patent

active

060487917

ABSTRACT:
A first TiSix layer is deposited on a polysilicon layer, then a silicon substrate is annealed in a vacuum atmosphere to crystallize the TiSix layer, and a second TiSix layer is provided on the first crystallized TiSix layer.

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