Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-11-06
2007-11-06
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S063000, C365S226000
Reexamination Certificate
active
11495768
ABSTRACT:
An electric fuse is formed over a semiconductor substrate, the electric fuse being broken when a current flows therethrough. A breaker transistor is formed in a first surface layer of the semiconductor substrate of a first conductivity type, the breaker transistor including a source region, a drain region and a gate electrode. The source and drain regions sandwiches a channel region. The gate electrode controls a conduction state between the source and drain regions. The drain region is connected to one end of the electric fuse. A breaker pad is connected to the end of the electric fuse to supply a fusing current to the electric fuse. A back-bias pad applies a fixed voltage to the first surface layer independently from both a power supply voltage and a ground potential. A fuse information read circuit reads a breakdown
on-breakdown state of the electric fuse.
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patent: 59-66142 (1984-04-01), None
Norman J. Rohrer et al., “PowerPC 970 in 130nm and 90nm Technologies”, ISSCC 2004, Session 3, Processors, 3.7.
Translation of International Preliminary Report on Patentability mailed Nov. 23, 2006, of International Application No. PCT/JP2005/002185.
Auduong Gene N.
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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