Semiconductor device with electric fuse having a flowing-out...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S249000, C257SE23149, C438S132000

Reexamination Certificate

active

07635907

ABSTRACT:
A semiconductor device includes an electric fuse formed on a semiconductor substrate and composed of an electric conductor. The electric fuse includes an upper layer interconnect, a via coupled to the upper interconnect and a lower layer interconnect coupled to the via, which are formed in different layers, respectively, in a condition before cutting the electric fuse, and wherein the electric fuse includes a flowing-out region formed of the electric conductor being flowed toward outside from the second interconnect and a void region formed between the first interconnect and the via or in the via, in a condition after cutting the electric fuse.

REFERENCES:
patent: 4064493 (1977-12-01), Davis
patent: 2004/0262710 (2004-12-01), Ueda
patent: 2005/0029620 (2005-02-01), Ueda
patent: 2005/0285222 (2005-12-01), Thei et al.
patent: 2004-186590 (2004-07-01), None
patent: 2005-39220 (2005-02-01), None
patent: 2005-57186 (2005-03-01), None

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