Semiconductor device with DRAM portion having...

Details Semiconductor device with DRAM portion having... Semiconductor device with DRAM portion having...

2006-02-06

2009-10-13

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000, C257SE27088

Reexamination Certificate

active

07602002

ABSTRACT:
The present invention provides a semiconductor device comprising: a semiconductor substrate having a DRAM portion and a Logic portion; a first transistor in said DRAM portion; a second transistor in said Logic portion; a first insulating layer covering said DRAM portion and said Logic portion; a first contact plug formed in said first insulating layer in electrically contact with said first transistor in said DRAM portion; a first bit line for said DRAM portion formed on said first insulating layer in electrically contact with said first contact plug; a nitride film formed in contact with said first insulating layer to cover said DRAM portion and said Logic portion, wherein said first bit line locating between said first insulating layer and said nitride film.

REFERENCES:
patent: 6130449 (2000-10-01), Matsuoka et al.
patent: 6150689 (2000-11-01), Narui et al.
patent: 6258649 (2001-07-01), Nakamura et al.
patent: 6737694 (2004-05-01), Kim et al.
patent: 6965139 (2005-11-01), Ohno
patent: 2002-231906 (2002-08-01), None
patent: 2003-7854 (2003-01-01), None

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