Semiconductor device with double sidewall spacer and layered...

Details Semiconductor device with double sidewall spacer and layered... Semiconductor device with double sidewall spacer and layered...

2005-07-05

2005-07-05

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S344000, C257S408000, C257S640000

Reexamination Certificate

active

06914309

ABSTRACT:
A semiconductor device has a pair of impurity regions in a semiconductor substrate. A silicon layer is formed on the impurity region. A gate insulating film is formed between the impurity regions. A gate electrode is formed on the gate insulating film. A first silicon nitride film is formed on the gate electrode. A silicon oxide film is formed on a side surface of the gate electrode. A second silicon nitride film is partially formed on the silicon layer and on a side surface of the silicon oxide film. A conductive layer is formed on the silicon layer.

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