Semiconductor device with doped contact impurity regions having

Details Semiconductor device with doped contact impurity regions having Semiconductor device with doped contact impurity regions having

1996-09-09

1999-08-31

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257336, H01L 2976, H01L 2994, H01L 31062

Patent

active

059457104

ABSTRACT:
A high withstand voltage semiconductor device includes a semiconductor substrate of a first conductivity type, a metallic wiring formed on a surface of the semiconductor substrate and having a contact face with said semiconductor substrate, a highly doped impurity region formed within the semiconductor substrate below the contact face and of a second conductivity type, a lightly doped impurity region formed around the highly doped impurity region and of the second conductivity type, and a MOSFET with a second conductivity-type having a source or drain region formed on the surface of the semiconductor substrate and electrically connected to the metallic wiring through the impurity regions.

REFERENCES:
patent: 4928163 (1990-05-01), Yoshida et al.
patent: 5132753 (1992-07-01), Chang et al.
patent: 5498887 (1996-03-01), Ohki et al.
patent: 5576574 (1996-11-01), Hong

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