Semiconductor device with diagonal capacitor bit line and fabric

Details Semiconductor device with diagonal capacitor bit line and fabric Semiconductor device with diagonal capacitor bit line and fabric

1998-05-28

2000-10-17

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257303, 257758, 257774, 257304, 257305, 257311, 257506, 257508, 257520, 257759, H01L 27108

Patent

active

061335983

ABSTRACT:
A semiconductor device includes a semiconductor substrate having an active area including first and second impurity regions of a transistor, a gate formed over the active area of the semiconductor substrate and isolated from the semiconductor substrate, a first insulating interlayer formed on the semiconductor substrate and having first and second contact holes exposing the first and the second impurity regions, respectively, a capacitor having a storage electrode and a plate electrode, the storage electrode being connected electrically to the first impurity region through the first contact hole, a bit line contact pad connected electrically to the second impurity region through the second contact hole, a second insulating interlayer formed on the plate electrode and having a third contact hole exposing the bit line contact pad, and a bit line formed on the second insulating interlayer and in contact with the bit line contact pad through the third contact hole.

REFERENCES:
patent: 5014103 (1991-05-01), Ema
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5194752 (1993-03-01), Kumagai et al.
patent: 5412239 (1995-05-01), Williams
patent: 5714778 (1998-02-01), Yamazaki
patent: 5808365 (1998-09-01), Mori
patent: 5866927 (1999-02-01), Cho et al.
patent: 5874756 (1999-02-01), Ema et al.

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