Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-10
2010-06-29
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S758000, C257S755000
Reexamination Certificate
active
07745864
ABSTRACT:
A semiconductor device includes a semiconductor substrate divided into a cell array region, a core region, and a peripheral region. Bit lines are formed in the respective regions. Storage node contact plugs are formed in the cell array region, and blocking patterns are simultaneously formed around the bit lines of the core region and the peripheral region. Capacitors are formed in the cell array region to come into contact with the storage node contact plugs, and metal contact plugs are formed to come into contact with the capacitors of the cell array region and the bit lines of the core region and the peripheral region. In the semiconductor device, even if the metal contact plugs are not aligned with the bit lines, the blocking pattern works to stabilize the contact between the metal contact plugs and the bit lines.
REFERENCES:
patent: 2002/0135004 (2002-09-01), Uh et al.
patent: 10-0200697 (1999-03-01), None
patent: 1020040060406 (2004-07-01), None
patent: 1020060118784 (2006-11-01), None
patent: 10-0709568 (2007-04-01), None
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Tran Tan N
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