Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-19
1997-08-12
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257382, 257412, 257754, 257758, 257903, H01L 2711
Patent
active
056568410
ABSTRACT:
In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed. Thus, resistance of a common contact having s three-dimensional structure is reduced.
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Hanaoka Katsunari
Isshiki Kaihei
Shindou Yasuyuki
Tanigawa Tetsurou
Watanabe Hirofumi
Mintel William
Ricoh & Company, Ltd.
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