Semiconductor device with conductive via and method of making sa

Details Semiconductor device with conductive via and method of making sa Semiconductor device with conductive via and method of making sa

1998-09-01

2000-11-14

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438396, 438669, 438625, 438629, 438666, 438720, 437195, 437187, H01L 214763

Patent

active

061469963

ABSTRACT:
A semiconductor device includes a semiconductor substrate, e.g., a part of a silicon wafer having an oxide layer disposed thereon. A metal stack is disposed over the semiconductor substrate and a dielectric layer is disposed over the metal stack. The dielectric layer has a via hole formed therein that is misaligned with the metal stack such that a portion of the via hole extends beyond the top of the metal stack and exposes at least a portion of one of the sidewalls of the metal stack. A sidewall cap layer is formed on the exposed portion of the sidewall of the metal stack. The sidewall cap layer is configured to resist substantial penetration of WF.sub.6 during chemical vapor deposition of tungsten. The sidewall cap layer may be a nitrided layer or a layer of a dielectric material. A conductive material comprised of tungsten is disposed in and substantially fills the via hole. Methods for making a conductive via in a semiconductor device are also described.

REFERENCES:
G.A. Dixit, R.H. Havemann, L. Halliday, J. Strupp, B. Roberts, R.L. Jackson, and E.J. McInerney, "A Robust, Versatile MOCVD TiN Process," Proceedings of the Twelfth Intl. VMIC Conf. (1995), pp. 175-181.

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