Semiconductor device with conductive connecting layer and abutti

Details Semiconductor device with conductive connecting layer and abutti Semiconductor device with conductive connecting layer and abutti

1994-05-24

1998-04-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257377, 257508, 257754, 257755, 257759, 257760, 257641, 257649, H01L 2978, H01L 2348, H01L 2702, H01L 2934

Patent

active

057367701

ABSTRACT:
A semiconductor device comprising: a semiconductor substrate; a diffused region extending from the surface and to the inside of the semiconductor substrate; a first insulating layer formed on the semiconductor substrate and having a contact hole located through which the diffused region is exposed; a first conductor layer formed on a portion of the first insulating layer and connected so the diffused region through the first contact hole; and an insulator section made of an oxide of the substance of the first conductor layer and formed on another portion of the first insulating layer to surround the first conductor layer.

REFERENCES:
patent: 4844776 (1989-07-01), Lee et al.
patent: 4873557 (1989-10-01), Kita
patent: 4922311 (1990-05-01), Lee et al.
patent: 5162881 (1992-11-01), Ohya
patent: 5164814 (1992-11-01), Okumura
patent: 5182619 (1993-01-01), Pfiester
patent: 5198378 (1993-03-01), Rodder et al.
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5296729 (1994-03-01), Yamanaka et al.
patent: 5384485 (1995-01-01), Nishida et al.
patent: 5396094 (1995-03-01), Matsuo
patent: 5500558 (1996-03-01), Hayashide

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