Semiconductor device with compressive and tensile stresses

Details Semiconductor device with compressive and tensile stresses Semiconductor device with compressive and tensile stresses

2005-05-18

2010-10-19

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

C257S190000, C257S192000, C257SE21182, C257SE29193

Reexamination Certificate

active

07816766

ABSTRACT:
A semiconductor device includes a gate electrode formed on a silicon substrate in correspondence to a channel region via a gate insulation film, and source and drain regions of p-type formed in the silicon substrate at respective outer sides of sidewall insulation films on the gate electrode, a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films epitaxially to the silicon substrate so as to be enclosed respectively by the source and drain regions, each of the SiGe mixed crystal regions being grown to a level above a level of a gate insulation film interface between the gate insulation film and the silicon substrate, wherein there is provided a compressive stress film at respective top surfaces of the SiGe mixed crystal regions.

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