Semiconductor device with composite surface insulator

Details Semiconductor device with composite surface insulator Semiconductor device with composite surface insulator

1991-02-25

1992-11-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257640, H01L 2968, H01L 2702, H01L 2934

Patent

active

051609886

ABSTRACT:
A semiconductor device comprises a substrate, first insulation layers formed on the substrate, and a second insulation layer formed on the substrate. The second insulation layer, which acts as a dielectric material of a capacitor component of the semiconductor device, is thinner than each of the first insulation layers.

REFERENCES:
patent: 4335505 (1982-06-01), Shibata et al.
patent: 4542481 (1985-09-01), Lange
patent: 4672410 (1987-06-01), Miura et al.
patent: 4704368 (1987-11-01), Goth et al.
patent: 4713678 (1987-12-01), Womack et al.
patent: 4717942 (1988-01-01), Nakamura et al.
Terman, L. M., "Aluminum-Silicon Self-Aligned Gate 1-Device with Narrow Word Line Pitch" IBM Technical Disclosure Bulletin, vol. 15 No. 4 (Sep. 1972) pp. 1163-1164.

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