Semiconductor device with components embedded in backside...

Details Semiconductor device with components embedded in backside... Semiconductor device with components embedded in backside...

2005-07-05

2005-07-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S122000, C438S778000

Reexamination Certificate

active

06913999

ABSTRACT:
A semiconductor substrate with integrated circuit devices on its front side and a high thermal conductivity layer such as diamond on its back side, with components such as capacitors embedded in the high thermal conductivity layer and coupled to the front side integrated circuits with vias through the substrate.

REFERENCES:
patent: 5391914 (1995-02-01), Sullivan et al.
patent: 5682063 (1997-10-01), Yamamoto et al.
patent: 5683939 (1997-11-01), Schrantz et al.
patent: 6075712 (2000-06-01), McMahon
patent: 6509124 (2003-01-01), Noguchi et al.
patent: 6621535 (2003-09-01), Fukada
patent: PCT/US 03/08592 (2003-03-01), None

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