Semiconductor device with circuit for reduced parasitic...

Details Semiconductor device with circuit for reduced parasitic... Semiconductor device with circuit for reduced parasitic...

2011-08-30

2011-08-30

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE23085, C257SE25029, C257SE27016, C257S532000, C257S177000, C257S528000, C257S535000, C257S379000, C257S691000, C257S724000

Reexamination Certificate

active

08008699

ABSTRACT:
Parasitic inductance of the main circuit of a power source unit is reduced. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

REFERENCES:
patent: 5049972 (1991-09-01), Uda et al.
patent: 6700793 (2004-03-01), Takagawa et al.
patent: 6820241 (2004-11-01), Yamamoto
patent: 6842346 (2005-01-01), Takagawa et al.
patent: 6940724 (2005-09-01), Divakar et al.
patent: 7295453 (2007-11-01), Shiraishi et al.
patent: 7514783 (2009-04-01), Shimokawa et al.
patent: 7535741 (2009-05-01), Shiraishi et al.
patent: 7659144 (2010-02-01), Shirai et al.
patent: 7679173 (2010-03-01), Uno et al.
patent: 2002/0093094 (2002-07-01), Takagawa et al.
patent: 2005/0156204 (2005-07-01), Uno et al.
patent: 2006/0006432 (2006-01-01), Shiraishi et al.
patent: 2007/0145580 (2007-06-01), Satou et al.
patent: 2007/0228534 (2007-10-01), Uno et al.
patent: 2007/0257708 (2007-11-01), Shimokawa et al.
patent: 2009/0039394 (2009-02-01), Uno et al.
patent: 2006-73664 (2006-03-01), None
patent: 548827 (2003-08-01), None
Taiwan Intellectual Property Office office action for the TIPO patent application 096119329 (Feb. 24, 2011).

Affiliated with

Also associated with

Rating

Semiconductor device with circuit for reduced parasitic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with circuit for reduced parasitic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with circuit for reduced parasitic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656898