Semiconductor device with charge-up preventing function

Details Semiconductor device with charge-up preventing function Semiconductor device with charge-up preventing function

1996-02-07

1996-12-24

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257357, 257529, H01L 2362, H01L 2900

Patent

active

055875980

ABSTRACT:
Disclosed is a semiconductor device comprising a silicon substrate, a pad provided on the substrate and an integrated circuit portion provided in the substrate. The pad and the integrated circuit portion are electrically connected together by a first wiring layer. The pad and the substrate are electrically connected together by a second wiring layer. The second wiring layer includes a fuse portion. The first wiring layer is always grounded via the fuse portion while processing the device.

REFERENCES:
patent: 3712995 (1973-01-01), Steudel
patent: 4015147 (1977-03-01), Davidson et al.
patent: 4231149 (1980-11-01), Chapman et al.
patent: 4801558 (1989-01-01), Simmons et al.
patent: 4941028 (1990-07-01), Chen et al.
patent: 5341267 (1994-08-01), Whitten et al.
patent: 5369054 (1994-11-01), Yen et al.

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