Semiconductor device with capacitor and manufacturing method...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S213000, C257S288000, C438S003000

Reexamination Certificate

active

10785953

ABSTRACT:
The present invention relates to a semiconductor device having capacitors. The configuration of the device includes: capacitor upper electrodes14a, 14bformed via a dielectric film13on plate lines12athat become capacitor lower electrodes; a conductive connecting sections12bthat are connected to one ends of the plate lines12aand have contact regions; upper conductive patterns14cthat are formed between the contact regions and the edge of plate lines12aon the dielectric film13on the conductive connecting sections12band are in the same layer as the capacitor upper electrodes14a, 14b.

REFERENCES:
patent: 6603161 (2003-08-01), Kanaya et al.
patent: 2001-257320 (2001-09-01), None
patent: 2001-274353 (2001-10-01), None
patent: 2002-270788 (2002-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with capacitor and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with capacitor and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with capacitor and manufacturing method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3753962

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.