Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C438S003000
Reexamination Certificate
active
10785953
ABSTRACT:
The present invention relates to a semiconductor device having capacitors. The configuration of the device includes: capacitor upper electrodes14a, 14bformed via a dielectric film13on plate lines12athat become capacitor lower electrodes; a conductive connecting sections12bthat are connected to one ends of the plate lines12aand have contact regions; upper conductive patterns14cthat are formed between the contact regions and the edge of plate lines12aon the dielectric film13on the conductive connecting sections12band are in the same layer as the capacitor upper electrodes14a, 14b.
REFERENCES:
patent: 6603161 (2003-08-01), Kanaya et al.
patent: 2001-257320 (2001-09-01), None
patent: 2001-274353 (2001-10-01), None
patent: 2002-270788 (2002-09-01), None
Flynn Nathan J.
Quinto Kevin
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