Semiconductor device with bus terminating function

Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Bus or line termination

Reexamination Certificate

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C326S087000

Reexamination Certificate

active

11418303

ABSTRACT:
The distance between a drain contact and gate electrode in a terminating transistor, which couples a termination resistor connected to an output terminal to a power source node, is set shorter than in an output transistor, which drives an output node in accordance with an internal signal. The area of the terminating circuit is reduced while the reliability against the surge is maintained. Thus, an output circuit containing the terminating circuit that occupies a small area and is capable of transmitting a signal/data at high speed is provided.

REFERENCES:
patent: 4859877 (1989-08-01), Cooperman et al.
patent: 4990802 (1991-02-01), Smooha
patent: 5023488 (1991-06-01), Gunning
patent: 5438281 (1995-08-01), Takahashi et al.
patent: 5440163 (1995-08-01), Ohhashi
patent: 5493142 (1996-02-01), Randazzo et al.
patent: 5705941 (1998-01-01), Fukazawa et al.
patent: 5726583 (1998-03-01), Kaplinsky
patent: 5731614 (1998-03-01), Ham
patent: 5731711 (1998-03-01), Gabara
patent: 5867418 (1999-02-01), Okasaka et al.
patent: 5949252 (1999-09-01), Taguchi
patent: 6031704 (2000-02-01), Jeong
patent: 6054881 (2000-04-01), Stoenner
patent: 6239619 (2001-05-01), Yuan et al.
patent: 6323689 (2001-11-01), Morishita
patent: 6329837 (2001-12-01), Whitworth et al.
patent: 6331787 (2001-12-01), Whitworth et al.
patent: 6356102 (2002-03-01), Klein et al.
patent: 6356106 (2002-03-01), Greeff et al.
patent: 6501108 (2002-12-01), Suzuki et al.
patent: 6541824 (2003-04-01), Lee et al.
patent: 6545322 (2003-04-01), Ishii et al.
patent: 6552372 (2003-04-01), Wu et al.
patent: 6583972 (2003-06-01), Verhaege et al.
patent: 6642742 (2003-11-01), Loyer
patent: 6714039 (2004-03-01), Salcido et al.
patent: 6720795 (2004-04-01), Partow et al.
patent: 6754132 (2004-06-01), Kyung
patent: 6759874 (2004-07-01), Braun et al.
patent: 6768393 (2004-07-01), Song
patent: 6777976 (2004-08-01), Kuge
patent: 6809546 (2004-10-01), Song et al.
patent: 6853213 (2005-02-01), Funaba
patent: 6924669 (2005-08-01), Itoh et al.
patent: 6927600 (2005-08-01), Choe
patent: 6967500 (2005-11-01), Lin et al.
patent: 2003/0080774 (2003-05-01), Funaba
patent: 2004/0217774 (2004-11-01), Choe
patent: 2005/0007150 (2005-01-01), Omote
patent: 2005/0046441 (2005-03-01), Braceras et al.
patent: 2005/0194991 (2005-09-01), Dour et al.
patent: 0 818 734 (1998-01-01), None
patent: 3-238858 (1991-10-01), None
patent: 5-224790 (1993-09-01), None
patent: 5-225358 (1993-09-01), None
patent: 5-326846 (1993-12-01), None
patent: 07-086509 (1995-03-01), None
patent: 07-130947 (1995-05-01), None
patent: 8-17936 (1996-01-01), None
patent: 8-204539 (1996-08-01), None
patent: 10-20974 (1998-01-01), None
patent: 10-65744 (1998-03-01), None
patent: 11-214621 (1999-08-01), None
patent: 2000-49251 (2000-02-01), None
patent: 2000-338191 (2000-02-01), None
patent: 2000-349165 (2000-02-01), None
patent: 2001-36073 (2001-02-01), None
patent: 2001-127173 (2001-05-01), None
patent: 2002-9281 (2002-01-01), None
patent: 2003-283322 (2003-10-01), None
patent: WO 03/049291 (2003-06-01), None
Beebe, Stephen G., “Characterization, Modeling, and Design of ESD Protection Circuits”, Chapter 2 -ESD Circuit Characterization and Design Issues, Mar. 1998 pp. 37-53.
Ismail M. et al, “Analog VLSI Signal and Information Processing”, Chapter 16 Analog and Mixed Analog-Digital Layout, 1994, pp. 699-726, McGraw-Hill, Inc., USA.
Weste N., et al., “Principles of CMOS VLSI Design a Systems Perspective”, 5.3 Electrical and Physical Design of Logic Gates, 5.3.5 Source-drain capacitance, 1985, pp. 185-186., Addison-Wesley VISI Systems Series.
Dabral, S., “Basic ESD and I/O Design”, A Wiley Interscience Publication, John Wiley & Sons, Inc. pp. 10-12 and pp. 183-190, 1998, USA.
Duvvury, C., et al. “ESD Protection Reliability in I μ M CMOS Technologies”, Semiconductor Advanced Development, 1986, pp. 199-205.
Dingwall, A., “C2L: A New High-Speed High-Density Bulk CMOS Technology”, IEEE Journal of Solid-State Circuits, vol. SC-12, No. 4 Aug. 1977, pp. 344-349.
Duvvury, C. et al., “ESD Phenomena and Protection issues in CMOS Output Buffers” IEEE/IRPS, 1997, pp. 174-180.
Duvvury C., et al., “ESD Protection: Design and Layout Issues for VLSI Circuits”, IEEE Transactions on Industry Applications, vol. 25, No. 1 Jan./Feb. 1989, pp. 41-47.
JEDEC Publishes DDR2 Standard, JEDEC Sep. 12, 2003. Arlington Virginia.
JEDEC Standard “Double Data Rate (DDR) SDRAM Specification” JESD79E, (revision of JESD79D) May 2005.
JEDEC Standard “DDR2 SDRAM Specification” JESD79-2C (revision of JESD79-2B), May 2006.
Minutes of Meeting No. 100, JC-42.3 Committee on DRAM Memories, Sep. 12-13, 2001, Las Vegas, Nevada, pp. 1-17.
Minutes of JC-42 Interim Meeting, Oct. 23-24, 2001, Sacramento, California, pp. 1-11.
Minutes of Meeting No. 101, JC-42.3 Committee on Ram Memories, Dec. 5-7, 2001, Honolulu, Hawaii, pp. 1-21.
“DDRII 533MT/s, Comparative Study of DDR-II Termination, DDR-II signal Integrity Simulation Results”, JC42.3 & 42.5 DDR-II, Oct. 22, 2001, Samsung Electronics, 45 pages.
“Proposal to Add Active Termination to DDRII (Results of Task Group)”, Item 1291, JEDEC Second Showing, Dec. 2001, pp. 1-8.
“The JEDEC Patent Policy” Jedec, SAM 0680054, pp. 1-2.
JEDEC Patent Policy, Posted Jun. 20, 2003.
“JEDEC Manual of Organization and Procedure”, JEDEC Manual, JM21M (revision of JM21L, Jul. 2002) Dec. 2006, 35 pages.

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