Semiconductor device with buried side contact

Details Semiconductor device with buried side contact Semiconductor device with buried side contact

1988-07-08

1991-01-08

James, Andrew J.

357 59, 357 49, 357 55, 01L 2972, 01L 2906, H01L 2972, H01L 2906

Patent

active

049840487

ABSTRACT:
Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.

REFERENCES:
patent: 4333227 (1982-06-01), Horng et al.
patent: 4589193 (1986-05-01), Goth et al.
patent: 4686557 (1987-08-01), Mahrla
patent: 4688069 (1987-08-01), Joy et al.
patent: 4696097 (1987-09-01), McLaughlin et al.
patent: 4717681 (1988-01-01), Curran
patent: 4733287 (1988-03-01), Bower
patent: 4739379 (1988-04-01), Akagi et al.
patent: 4749661 (1988-06-01), Bower

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