Semiconductor device with buried side contact

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Details

357 59, 357 49, 357 55, 01L 2972, 01L 2906, H01L 2972, H01L 2906

Patent

active

049840487

ABSTRACT:
Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.

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patent: 4686557 (1987-08-01), Mahrla
patent: 4688069 (1987-08-01), Joy et al.
patent: 4696097 (1987-09-01), McLaughlin et al.
patent: 4717681 (1988-01-01), Curran
patent: 4733287 (1988-03-01), Bower
patent: 4739379 (1988-04-01), Akagi et al.
patent: 4749661 (1988-06-01), Bower

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