Semiconductor device with buried-oxide film

Details Semiconductor device with buried-oxide film Semiconductor device with buried-oxide film

2007-06-05

2007-06-05

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S135000, C257SE27091, C438S155000

Reexamination Certificate

active

11091419

ABSTRACT:
The present invention is a semiconductor device which includes: a semiconductor substrate; a BOX film disposed on top of the semiconductor substrate; an active layer disposed on top of the BOX film; a base region disposed proximate to a surface of the active layer; a first main electrode region disposed within the base region; a second main electrode region formed from the surface of the active layer to a surface of the BOX film or protruding through the BOX film, and the second main electrode region being spaced from the base region; a gate insulator film disposed on the surface of the base region; a gate electrode disposed on top of the gate insulator film; a first main electrode connected to the first main electrode region; a second main electrode connected to the second main electrode region; and a ground electrode connected to the semiconductor substrate on an opposite side surface from a surface having the BOX film on the semiconductor substrate.

REFERENCES:
patent: 6121661 (2000-09-01), Assaderaghi et al.
patent: 6307224 (2001-10-01), Shirai
patent: 6352882 (2002-03-01), Assaderaghi et al.
patent: 6459142 (2002-10-01), Tihanyi
patent: 6740930 (2004-05-01), Mattei et al.

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