Semiconductor device with bump structure

Details Semiconductor device with bump structure Semiconductor device with bump structure

1995-10-18

1997-08-12

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257738, 257750, 257751, 257762, 257763, 257770, 257778, H01L 2348, H01L 2352, H01L 2940

Patent

active

056568584

ABSTRACT:
A semiconductor device, which has a high adhesiveness to the Cu film and the barrier metal at the bump part or LSI wiring part of a flip chip, is disclosed. On a silicon substrate are formed a transistor as a functional element and a bump for making contact with the transistor and an external substrate. On the surface of the silicon substrate is formed a metallic film, and on the metallic film is formed an insulating film, and a part of the metallic film is exposed through a contact hole. On the metallic film within the contact hole is formed a barrier metal made of TiN, and on the barrier metal is formed a bonding layer made of Ti. On the bonding layer is formed a bump growing Cu film, and on the bump growing Cu film is formed a bump structure.

REFERENCES:
Wang: "Barriers Against Copper Diffusion into Silcon and Drift Through Silicon Dioxide", Mrs Bulletin/Aug. 1994, pp. 30-40.
Krist et al: "H in Ti thin films", Thin Solid Films, vol. 228 (1993) pp. 141-144.
Baba et al: "Fine Pitch Bumping for Tab", IMC 1994 Proceedings, Omiya, Apr. 20-22, 1994, pp. 408-413.
Kondo et al: "Formation of HIgh Adhesive and Pure Pt Layers on TiO.sub.2 ", J.Vac.Sci.Technol.A vol. 10, No.6, Nov-Dec. 1992, pp. 3456-3459.
Proceedings of the 55th meeting of the Applied Physics Association of Japan 1994, p.617 19a-ZD-9.
Proceedings of the 55th meeting of the Applied Physics Association of Japan 1994, p.725 21p-ZD-5.

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