Semiconductor device with bump electrodes

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257S750000, C257S758000, C257S786000

Reexamination Certificate

active

06861749

ABSTRACT:
A semiconductor device comprises a substrate having contact pads each covered by under bump metallurgy and a plurality of bump electrodes respectively provided on the under bump metallurgy covering the contact pads. According to one embodiment of the present invention, the semiconductor device is characterized by having at least one contact pad (e.g., a test contact pad) which is not provided with any bump electrode but still has under bump metallurgy provided thereon. According to another embodiment of the present invention, the semiconductor device is characterized by having at least a conductive line formed of the same material as the under bump metallurgy for interconnecting at least two of the contact pads. The present invention further provides methods of manufacturing the semiconductor devices.

REFERENCES:
patent: 6445001 (2002-09-01), Yoshida
patent: 20020100975 (2002-08-01), Kanda
patent: 20020121692 (2002-09-01), Lee et al.
patent: 20020149086 (2002-10-01), Aoki
patent: 20030067073 (2003-04-01), Akram et al.

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