Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-16
1999-11-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257408, H01L 2976
Patent
active
059947373
ABSTRACT:
This invention provides a semiconductor device such as an MOS transistor and a method of fabricating the same wherein a field oxide film is provided to surround a device region of a semiconductor substrate (including well), providing a gate on the device region via a gate insulating film, forming main doped layers destined to become a source and a drain in the device region of the semiconductor substrate between the gate and the field oxide film on opposite sides of the gate, and providing main active layers (high-concentration diffusion layers) having the impurity diffused and activated therein. Sub-doped layers are formed by selectively adding impurity to regions of the semiconductor substrate at boundaries between the device region and the field oxide film (except in the vicinity of the gate) and sub-active layers having the impurity diffused and activated therein are provided.
REFERENCES:
patent: 4080618 (1978-03-01), Tango et al.
patent: 4532697 (1985-08-01), Ko
patent: 5113234 (1992-05-01), Furuta et al.
patent: 5831319 (1998-11-01), Pan
Citizen Watch Co, Ltd.
Mintel William
LandOfFree
Semiconductor device with bird's beak does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with bird's beak, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with bird's beak will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1675938