Semiconductor device with asymmetric transistor and method...

Details Semiconductor device with asymmetric transistor and method... Semiconductor device with asymmetric transistor and method...

2005-12-29

2008-11-11

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S259000, C438S270000, C438S271000, C438S689000, C438S713000, C257SE27084, C257SE21218

Reexamination Certificate

active

07449401

ABSTRACT:
A semiconductor device with an asymmetric transistor and a method for fabricating the same are provided. The semiconductor device includes: a substrate having a plurality of first active regions, at least one second active region, and a plurality of device isolation regions; gate patterns formed in a step structure over a border region between individual first active regions and second active region, wherein one side of the individual gate pattern is formed over a portion of the individual first active region, and the other side of the individual gate pattern is formed over a portion of the second active region; spacers formed on lateral walls of the gate patterns; first cell junction regions formed in the first active regions, for connecting to storage nodes; and a second cell junction region formed in the second active region, for connecting to a bit line.

REFERENCES:
patent: 5210056 (1993-05-01), Pong et al.
patent: 5843846 (1998-12-01), Nguyen et al.
patent: 6465831 (2002-10-01), Park et al.
patent: 10-2001-017172 (2001-03-01), None
patent: 10-2006-0075424 (2006-07-01), None
patent: 10-2006-0076533 (2006-07-01), None
patent: 10-2006-0087875 (2006-08-01), None
Notice of Preliminary Rejection from the Korean Intellectual Property Office, dated Jan. 15, 2007, in counterpart Korean Patent Application No. 2005-008770.
An Office Action mailed Apr. 9, 2007, in a related U.S. Appl. No. 11/320,884.

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