Semiconductor device with asymmetric pocket implants

Details Semiconductor device with asymmetric pocket implants Semiconductor device with asymmetric pocket implants

2006-03-07

2006-03-07

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S345000, C257S404000, C257S408000

Reexamination Certificate

active

07009248

ABSTRACT:
A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.

REFERENCES:
patent: 4376947 (1983-03-01), Chiu et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 5449937 (1995-09-01), Arimura et al.
patent: 5895238 (1999-04-01), Mitani
patent: 6171913 (2001-01-01), Wang et al.
patent: 6255174 (2001-07-01), Yu
patent: 6255177 (2001-07-01), Fang et al.
patent: 6344405 (2002-02-01), Saha
patent: 6563176 (2003-05-01), Gauthier et al.
patent: 2003/0006460 (2003-01-01), Aoki et al.
patent: 2004/0061187 (2004-04-01), Weber et al.
patent: 2004/0099890 (2004-05-01), Umimoto et al.
patent: 2796204 (1999-07-01), None
Shinji Odanaka et al., “Potential Design And Transport Property Of 0.1-um MOSFET With Asymmetric Channel Profile”, IEEE Transactions On Electron Devices, vol. 44, No. 4, Apr. 1997.

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