Semiconductor device with antifuse

Details Semiconductor device with antifuse Semiconductor device with antifuse

1999-03-31

2000-12-19

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Bad bit

365 96, 3652257, G11C 1300

Patent

active

061634883

ABSTRACT:
In a DRAM with an antifuse for programming a defective address, the antifuse and one electrode of a capacitor are connected to a shared node and the other electrode of the capacitor receives a boost signal. To blow the antifuse, the shared node is set high. To maintain the antifuse unblown, the shared node is set low. Then the boost signal is raised high to boost the shared node. Even when the resistance value of antifuse 1 is decreased, excessive current does not flow. This eliminates the necessity of providing a protection circuit as conventional and thus reduces circuit scale.

REFERENCES:
patent: 5243226 (1993-09-01), Chan
patent: 5526312 (1996-06-01), Eltoukhy
patent: 5631862 (1997-05-01), Cutter et al.
"A Low-Power Sub 100 ns 256K Bit Dynamic RAM", S. Fujii et al., IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, Oct. 1983, pp. 441-446 .

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