Semiconductor device with an insulation film having emitter cont

Details Semiconductor device with an insulation film having emitter cont Semiconductor device with an insulation film having emitter cont

1998-04-30

2000-07-11

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257563, 257579, 257584, 257587, 257588, H01L 27082

Patent

active

060876751

ABSTRACT:
The present invention relates to a contact window structure having an insulation layer extending over an electrically conductive region. The insulation layer further has a plurality of contact windows which are filled with electrically conductive layers so that the electrically conductive layers are made into contact with the electrically conductive region so as to allow a contact portion of a probe to contact with at least one of the electrically conductive layers within the contact windows, wherein adjacent two of the contact windows are distanced from each other by a distance which is substantially equal to or narrower than a diameter of the contact portion of the probe, whereby the contact portion of the probe is necessarily made into contact with at least any one of the electrically conductive layers within the contact windows. There is no possibility that the contact portion of the probe is not made into contact with any electrically conductive layers. Namely, the above contact window structure allows a certain contact of the contact portion of the probe with the conductive layers which are electrically connected to the semiconductor regions.

REFERENCES:
patent: 3444443 (1969-05-01), Moroshima
patent: 3576476 (1971-04-01), Kerr
patent: 3582723 (1971-06-01), Kerr
patent: 3704398 (1972-11-01), Fukino
patent: 3895977 (1975-07-01), Sanders
patent: 4079505 (1978-03-01), Hirano et al.
patent: 4291319 (1981-09-01), Carinalli
patent: 5005071 (1991-04-01), Amano
patent: 5510652 (1996-04-01), Burke et al.
Japanese Office Action dated Sep. 22, 1999 with Partial Translation.

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